文章摘要
吴小四,朱银锋.直拉式单晶硅生长炉超导磁体研究[J].安徽建筑大学学报,2022,30():
直拉式单晶硅生长炉超导磁体研究
Study on Superconducting Magnet of Czochralski Single Crystal Silicon Growth Furnace
投稿时间:2021-08-02  修订日期:2021-11-03
DOI:
中文关键词: 超导磁体  磁场直拉法  导体  结构参数  安匝排布  磁场强度
英文关键词: superconducting magnet  magnetic field applied Czochralski method  Conductor  Structural parameters  Ampere turn arrangement  magnetic field intensity
基金项目:国家自然科学基金面上项目(No.51877001)、安徽省高等学校自然科学研究重点项目(KJ2019A0789)
作者单位E-mail
吴小四 安徽建筑大学 2283763771@qq.com 
朱银锋* 安徽建筑大学 277233658@qq.com 
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中文摘要:
      高集成度芯片的发展使得半导体行业对硅单晶材料提出尺寸与质量的要求。Cz法可生成大尺寸硅单晶,但生长中有热对流,边界层不稳定,使得生成的大尺寸晶体易生杂质。因磁场对导电熔体内对流有抑制效果,通过外加磁场可提高生成大尺寸晶体的品质。基于现有研究结果提出了一种用于单晶生长炉的瓦状结构超导磁体,确定了线圈结构参数、导体类型、安匝数及屏蔽体厚度及磁芯高度,使其满足大尺寸、高品质单晶硅生长所需的磁场强度(约0.5T)及磁场位型,从而降低磁漏。借助数值分析优化了超导磁体结构参数,有望为后续的MCZ硅单晶生长工艺参数提供有价值的参考依据。
英文摘要:
      With the development of highly integrated chips, the semiconductor industry requires the size and quality of silicon single crystal materials. Cz method can generate large-size silicon single crystal, but there is thermal convection in the growth and the boundary layer is unstable, which makes the large-size crystals easy to generate impurities. Because the magnetic field has an inhibitory effect on the convection in the conductive melt, the quality of large-size crystals can be improved by adding a magnetic field. Based on the existing research results, a tile shaped superconducting magnet for single crystal growth furnace is proposed in this paper. The coil structure parameters, conductor type, ampere turns, shield thickness and magnetic core height are determined to meet the magnetic field intensity (about 0.5T) and magnetic field potential required for the growth of large-size and high-quality single crystal silicon, so as to reduce magnetic leakage. The structural parameters of superconducting magnet are optimized by numerical analysis, which is expected to provide a valuable reference for the subsequent MCZ silicon single crystal growth process parameters.
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