| 陶方涛,吴世龙.恒电位法制备不同织构氧化亚铜薄膜工艺的研究[J].安徽建筑大学学报,2014,22(5):59-61 |
| 恒电位法制备不同织构氧化亚铜薄膜工艺的研究 |
| Preparation of Cuprous Oxide Thin Films with Varied Preferential Orientation via Potentiostatic Method |
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| DOI：10.11921/j.issn.2095-8382.20140515 |
| 中文关键词: 电沉积 摩尔比 Cu2O薄膜 |
| 英文关键词: preferential orientation Cu2O film electro-deposition |
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| 中文摘要: |
| 本文采用恒电位法[1-2]探索了CuSO4和乳酸溶液在摩尔比为1﹕3的条件下络合，以三电极体系在导电玻璃上沉积Cu2O薄膜的最佳工艺条件。通过分析Cu2+与络合剂乳酸在不同的溶液温度，沉积电位、以及溶液pH的条件下络合，来确定其对Cu2O薄膜的影响。采用X-射线衍射分析和扫描电子显微镜对薄膜样品结构和形貌进行表征。结果表明，在Cu2+与乳酸的摩尔比为1﹕3，溶液温度为65℃～75℃，沉积电位为-1.2V～-2.8V，溶液的pH = 10～12的条件下，得到（111）择优取向生长的Cu2O薄膜，呈砖红色，致密均匀。Cu2O膜 (200)择优取向生长的参数范围是：溶液温度65℃，沉积电位-1.2V,pH=7～9。 |
| 英文摘要: |
| The processing conditions to prepare Cu2O film on ITO substrate by potentiostatic method were explored under the condition of molar ratio of CuSO4 and lactic acid 1:3 in a three electrode system. The effect of the parameters including deposition temperature, potential, and solution pH complexation on the obtained Cu2O film were investigated in detail. The prepared Cu2O samples were characterized by X-ray diffractometer(XRD) and scanning electronic microscopy(SEM). The results showed that compact and uniform brick red Cu2O films with preferential orientation in (111) direction can be obtained under the conditions: mole ratio of Cu2+ and lactic acid is 1:3, deposition temperature, potential and pH are in the range of 65 ℃ ~ 75 ℃, -1.2 V ~ -2.8 V, and 10 ~ 12, respectively. Whereas the (200)-oriented Cu2O can be obtained under potential of -1.2 V, pH of 7 to 9, and temperature at 65 ℃. |
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